| PART |
Description |
Maker |
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| 2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 2SC3906K |
High breakdown voltage.Collector-base voltage VCBO 120 V
|
TY Semiconductor Co., Ltd
|
| 2SD2318 |
High DC current gain. Low saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| 2SA1257 |
High breakdown voltage. Small output capacitance.Collector-base voltage VCBO -180 V
|
TY Semiconductor Co., Ltd
|
| 2SC5063 |
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO)
|
TY Semiconductor Co., Ltd
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| 2SC4253 |
Good linearity of fT. Collector-base voltage VCBO 30 V
|
TY Semiconductor Co., Ltd
|
